Out of stock
$2.97000
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.97000 | |
| 200 | $1.15088 | |
| 500 | $1.11108 | |
| 1000 | $1.08999 |
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Request for STI18N65M2
STI18N65M2
MOSFET N-CH 650V 12A I2PAK
Order Code:
CIS1155864
Manufacturer Part No:
STI18N65M2
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK
Technical Datasheet:
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STI18N65M2 Information
| Mfr | STMicroelectronics |
|---|---|
| Series | MDmesh™ M2 |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| Base Product Number | STI18 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 110W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |