In stock:
8565
$0.90600
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.90600 | |
| 10 | $0.79964 | |
| 30 | $0.73640 | |
| 100 | $0.67271 | |
| 500 | $0.64299 | |
| 1000 | $0.63003 |
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Request for STD12N65M2
STD12N65M2
MOSFET N-CH 650V 8A DPAK
Order Code:
CIS1155879
Manufacturer Part No:
STD12N65M2
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 8A (Tc) 85W (Tc) Surface Mount DPAK
Technical Datasheet:
Buy with Confidence
STD12N65M2 Information
| Mfr | STMicroelectronics |
|---|---|
| Series | MDmesh™ M2 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Base Product Number | STD12 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 85W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |