Out of stock
$33.12040
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $33.12040 | |
| 30 | $28.51004 |
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Request for SCTWA90N65G2V-4
SCTWA90N65G2V-4
TRANS SJT N-CH 650V 119A HIP247
Order Code:
CIS1163877
Manufacturer Part No:
SCTWA90N65G2V-4
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
Technical Datasheet:
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SCTWA90N65G2V-4 Information
| Mfr | STMicroelectronics |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | HiP247™ Long Leads |
| Base Product Number | SCTWA90 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 565W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |