Out of stock
$36.43310
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $36.43310 | |
| 200 | $14.09961 | |
| 500 | $13.60776 | |
| 1000 | $13.36002 |
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Request for SCTH40N120G2V-7
SCTH40N120G2V-7
SILICON CARBIDE POWER MOSFET 120
Order Code:
CIS1163817
Manufacturer Part No:
SCTH40N120G2V-7
Manufacturer:
Detailed Description:
N-Channel 1200 V 36A (Tc) 238W (Tc) Surface Mount H2PAK-7
Technical Datasheet:
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SCTH40N120G2V-7 Information
| Mfr | STMicroelectronics |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Base Product Number | SCTH40 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 238W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |