Out of stock
$1.40060
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.40060 | |
| 10 | $1.18729 | |
| 30 | $1.07118 | |
| 100 | $0.93924 | |
| 500 | $0.87888 | |
| 1000 | $0.85339 |
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Request for LND150N3-G-P013
LND150N3-G-P013
MOSFET N-CH 500V 30MA TO92-3
Order Code:
CIS1321163
Manufacturer Part No:
LND150N3-G-P013
Manufacturer:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Detailed Description:
N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
Technical Datasheet:
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LND150N3-G-P013 Information
| Mfr | Microchip Technology |
|---|---|
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Base Product Number | LND150 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 740mW (Ta) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Rds On (Max) @ Id, Vgs | 1000Ohm @ 500µA, 0V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 535 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 25 V |
| FET Feature | Depletion Mode |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |