In stock:
47790
$1.01710
Standard Package:
4800
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.01710 | |
| 10 | $0.89271 | |
| 30 | $0.81856 | |
| 100 | $0.74370 | |
| 500 | $0.67556 | |
| 1000 | $0.66000 |
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Request for IRF6662TRPBF
IRF6662TRPBF
MOSFET N-CH 100V 8.3A DIRECTFET
Order Code:
CIS1455056
Manufacturer Part No:
IRF6662TRPBF
Manufacturer:
Package / Case:
DirectFET™ Isometric MZ
Detailed Description:
N-Channel 100 V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
Technical Datasheet:
Buy with Confidence
IRF6662TRPBF Information
| Mfr | Infineon Technologies |
|---|---|
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Last Time Buy |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MZ |
| Supplier Device Package | DIRECTFET™ MZ |
| Base Product Number | IRF6662 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |