Out of stock
$4.61440
Standard Package:
2000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $4.61440 | |
| 10 | $4.43813 | |
| 30 | $4.13312 | |
| 100 | $3.67998 |
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Request for IPT039N15N5ATMA1
IPT039N15N5ATMA1
OPTIMOS 5 POWER MOSFET
Order Code:
CIS1461386
Manufacturer Part No:
IPT039N15N5ATMA1
Manufacturer:
Package / Case:
8-PowerSFN
Detailed Description:
N-Channel 150 V 21A (Ta), 190A (Tc) 3.8W (Ta), 319W (Tc) Surface Mount PG-HSOF-8
Technical Datasheet:
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IPT039N15N5ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Supplier Device Package | PG-HSOF-8 |
| Base Product Number | IMBG65R |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 3.8W (Ta), 319W (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 190A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4.6V @ 257µA |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 75 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |