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In stock: 4154
$3.40400
Standard Package: 2000
Quantity Unit Price
1 $3.40400
10 $3.00777
30 $2.76575
100 $2.43999

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Request for IPT026N10N5ATMA1

IPT026N10N5ATMA1

MOSFET N-CH 100V 27A/202A 8HSOF

Order Code:
CIS1455889
Manufacturer Part No:
IPT026N10N5ATMA1
Manufacturer:
Package / Case:
8-PowerSFN
Detailed Description:
N-Channel 100 V 27A (Ta), 202A (Tc) 214W (Tc) Surface Mount PG-HSOF-8-1
Technical Datasheet:
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IPT026N10N5ATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™5
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Supplier Device Package PG-HSOF-8-1
Base Product Number IPT026
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 214W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected