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In stock: 40
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Standard Package: 1

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Request for IPP028N08N3GHKSA1

IPP028N08N3GHKSA1

N-CHANNEL POWER MOSFET

Order Code:
CIS1457451
Manufacturer Part No:
IPP028N08N3GHKSA1
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 80 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Technical Datasheet:
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IPP028N08N3GHKSA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Obsolete
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Base Product Number BSP317
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 300W (Tc)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected