In stock:
16152
$0.39370
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.39370 | |
| 30 | $0.36496 |
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Request for IPN80R1K4P7ATMA1
IPN80R1K4P7ATMA1
MOSFET N-CH 800V 4A SOT223
Order Code:
CIS1456005
Manufacturer Part No:
IPN80R1K4P7ATMA1
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 800 V 4A (Tc) 7W (Tc) Surface Mount PG-SOT223
Technical Datasheet:
Buy with Confidence
IPN80R1K4P7ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ P7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223 |
| Base Product Number | IPN80R1 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 7W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |