In stock:
27
$0.82390
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.82390 | |
200 | $0.31967 | |
500 | $0.30937 | |
1000 | $0.30418 |
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Request for IPN50R650CEATMA1
IPN50R650CEATMA1
MOSFET N-CH 500V 9A SOT223
Order Code:
CIS1457680
Manufacturer Part No:
IPN50R650CEATMA1
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 500 V 9A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Technical Datasheet:
IPN50R650CEATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ CE |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | PG-SOT223-3 |
Base Product Number | IPN50R650 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 5W (Tc) |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |