In stock:
70000
$1.51440
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.51440 | |
| 200 | $0.58728 | |
| 500 | $0.56729 | |
| 1000 | $0.55730 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPL65R1K5C6SATMA1
IPL65R1K5C6SATMA1
MOSFET N-CH 650V 3A THIN-PAK
Order Code:
CIS1461321
Manufacturer Part No:
IPL65R1K5C6SATMA1
Manufacturer:
Package / Case:
8-PowerTDFN
Detailed Description:
N-Channel 650 V 3A (Tc) 26.6W (Tc) Surface Mount PG-TSON-8-2
Technical Datasheet:
Buy with Confidence
IPL65R1K5C6SATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ C6 |
| Package | Tape & Reel (TR) |
| Product Status | Not For New Designs |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TSON-8-2 |
| Base Product Number | IPL65R1 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 26.6W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |