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Request for IPL65R1K0C6SATMA1
IPL65R1K0C6SATMA1
MOSFET N-CH 650V 4.2A THIN-PAK
Order Code:
CIS1461300
Manufacturer Part No:
IPL65R1K0C6SATMA1
Manufacturer:
Package / Case:
8-PowerTDFN
Detailed Description:
N-Channel 650 V 4.2A (Tc) 34.7W (Tc) Surface Mount PG-TSON-8-2
Technical Datasheet:
Buy with Confidence
IPL65R1K0C6SATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ C6 |
| Package | Tape & Reel (TR) |
| Product Status | Not For New Designs |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TSON-8-2 |
| Base Product Number | IPL65R1 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 34.7W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |