Out of stock
$12.61480
Standard Package:
1
| Quantity | Unit Price | |
|---|---|---|
| 1 | $12.61480 | |
| 200 | $4.88824 | |
| 500 | $4.71667 | |
| 1000 | $4.63089 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPI65R190C
IPI65R190C
N-CHANNEL POWER MOSFET
Order Code:
CIS1461432
Manufacturer Part No:
IPI65R190C
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3-1
Technical Datasheet:
Buy with Confidence
IPI65R190C Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3-1 |
| Base Product Number | IPF039N |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 151W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | Vendor Undefined |