In stock:
4000
$4.49590
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $4.49590 | |
| 200 | $1.73946 | |
| 500 | $1.67877 | |
| 1000 | $1.65000 |
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Request for IPI045N10N3GXKSA1
IPI045N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3
Order Code:
CIS1457557
Manufacturer Part No:
IPI045N10N3GXKSA1
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
Technical Datasheet:
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IPI045N10N3GXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3 |
| Base Product Number | IPI045 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 214W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |