In stock:
2280
$1.36860
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.36860 | |
| 10 | $1.20054 | |
| 30 | $1.10049 | |
| 100 | $0.99963 | |
| 500 | $0.90766 | |
| 1000 | $0.88672 |
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Request for IPI029N06NAKSA1
IPI029N06NAKSA1
MOSFET N-CH 60V 24A/100A TO262-3
Order Code:
CIS1456059
Manufacturer Part No:
IPI029N06NAKSA1
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 60 V 24A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Through Hole PG-TO262-3
Technical Datasheet:
Buy with Confidence
IPI029N06NAKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3 |
| Base Product Number | IPI029 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |