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Standard Package: 1

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Request for IPI023NE7N3G

IPI023NE7N3G

N-CHANNEL POWER MOSFET

Order Code:
CIS1461426
Manufacturer Part No:
IPI023NE7N3G
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
Technical Datasheet:
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IPI023NE7N3G Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package PG-TO262-3
Base Product Number IAUC120
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 300W (Tc)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 37.5 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected