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Request for IPD78CN10NG

IPD78CN10NG

POWER FIELD-EFFECT TRANSISTOR, 1

Order Code:
CIS1460969
Manufacturer Part No:
IPD78CN10NG
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 100 V 13A (Tc) 31W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
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IPD78CN10NG Information

More Information
Mfr Infineon Technologies
Series OptiMOS™ 2
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-313
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 31W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 50 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8542.39.0001