Out of stock
$4.26310
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $4.26310 | |
200 | $1.64982 | |
500 | $1.59184 | |
1000 | $1.56839 |
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Request for IPD60R600E6ATMA1
IPD60R600E6ATMA1
MOSFET N-CH 600V 7.3A TO252
Order Code:
CIS1461296
Manufacturer Part No:
IPD60R600E6ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
IPD60R600E6ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ E6 |
Package | Tape & Reel (TR) |
Product Status | Not For New Designs |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3 |
Base Product Number | IPD60R600 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 63W (Tc) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |