In stock:
3368336
$0.92310
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.92310 | |
| 10 | $0.80937 | |
| 30 | $0.74171 | |
| 100 | $0.67322 | |
| 500 | $0.61118 | |
| 1000 | $0.59697 |
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Request for IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
MOSFET N-CH 100V 60A TO252-3
Order Code:
CIS1456476
Manufacturer Part No:
IPD60N10S4L12ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
Buy with Confidence
IPD60N10S4L12ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | Automotive, AEC-Q101, HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3-313 |
| Base Product Number | IPD60N10 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 94W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |