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In stock: 20
$2.87250
Standard Package: 1000
Quantity Unit Price
1 $2.87250
10 $2.52234
30 $2.30834
100 $2.12967

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Request for IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1

MOSFET N-CH 75V 80A TO263-3

Order Code:
CIS1455905
Manufacturer Part No:
IPB80N08S2L07ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 75 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
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IPB80N08S2L07ATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number IPB80N
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 300W (Tc)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 233 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected