×

:

Not a valid Time
This is a required field.
In stock: 48884
$0.00000
Standard Package: 1000

* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.

Request for IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1

MOSFET N-CH 30V 80A TO263-3

Order Code:
CIS1461186
Manufacturer Part No:
IPB80N03S4L02ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 30 V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
Buy with Confidence

IPB80N03S4L02ATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number IPB80N
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 136W (Tc)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 9750 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected