In stock:
3256
$3.56150
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $3.56150 | |
| 10 | $3.42011 | |
| 30 | $3.17401 | |
| 100 | $2.95996 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB65R090CFD7ATMA1
IPB65R090CFD7ATMA1
HIGH POWER_NEW
Order Code:
CIS1455741
Manufacturer Part No:
IPB65R090CFD7ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 25A (Tc) 127W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
Buy with Confidence
IPB65R090CFD7ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ CFD7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| Base Product Number | IPB65R |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 127W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 630µA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2513 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |