In stock:
19800
$4.30810
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $4.30810 | |
10 | $4.13664 | |
30 | $3.83938 | |
100 | $3.58003 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB048N15N5LFATMA1
IPB048N15N5LFATMA1
MOSFET N-CH 150V 120A D2PAK
Order Code:
CIS1455863
Manufacturer Part No:
IPB048N15N5LFATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 150 V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
IPB048N15N5LFATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™-5 |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3 |
Base Product Number | IPB048 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 313W (Tc) |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4.9V @ 255µA |
Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 75 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |