In stock:
6
$0.00000
Standard Package:
1
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Request for IPB039N10N3GE8197ATMA1
IPB039N10N3GE8197ATMA1
N-CHANNEL POWER MOSFET
Order Code:
CIS1457378
Manufacturer Part No:
IPB039N10N3GE8197ATMA1
Manufacturer:
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Detailed Description:
N-Channel 100 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7-3
Technical Datasheet:
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IPB039N10N3GE8197ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ 3 |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package | PG-TO263-7-3 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 214W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | Vendor Undefined |