In stock:
1684
$10.74350
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $10.74350 | |
| 30 | $10.26004 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IMZA65R030M1HXKSA1
IMZA65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Order Code:
CIS1456221
Manufacturer Part No:
IMZA65R030M1HXKSA1
Manufacturer:
Package / Case:
TO-247-4
Detailed Description:
N-Channel 650 V 53A (Tc) 197W (Tc) Through Hole PG-TO247-4-3
Technical Datasheet:
Buy with Confidence
IMZA65R030M1HXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-3 |
| Base Product Number | IRF9332 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 197W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 8.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Vgs (Max) | +20V, -2V |
| Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |