In stock:
810
$10.28090
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $10.28090 | |
| 200 | $3.97871 | |
| 500 | $3.83889 | |
| 1000 | $3.77001 |
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Request for IMZ120R350M1HXKSA1
IMZ120R350M1HXKSA1
SICFET N-CH 1.2KV 4.7A TO247-4
Order Code:
CIS1456303
Manufacturer Part No:
IMZ120R350M1HXKSA1
Manufacturer:
Package / Case:
TO-247-4
Detailed Description:
N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
Technical Datasheet:
Buy with Confidence
IMZ120R350M1HXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-1 |
| Base Product Number | IMZ120 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 60W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 800 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |