In stock:
2800
$18.27110
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $18.27110 | |
| 200 | $7.07274 | |
| 500 | $6.82243 | |
| 1000 | $6.70001 |
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Request for IMBG65R039M1HXTMA1
IMBG65R039M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Order Code:
CIS1461362
Manufacturer Part No:
IMBG65R039M1HXTMA1
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 650 V 54A (Tc) 211W (Tc) Surface Mount PG-TO263-7-12
Technical Datasheet:
Buy with Confidence
IMBG65R039M1HXTMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package | PG-TO263-7-12 |
| Base Product Number | IMBG65 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 211W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1393 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |