In stock:
9900
$6.95460
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $6.95460 | |
| 10 | $6.67781 | |
| 30 | $6.19794 | |
| 100 | $5.77997 |
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Request for IMBG120R090M1HXTMA1
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Order Code:
CIS1461833
Manufacturer Part No:
IMBG120R090M1HXTMA1
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 1200 V 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
Technical Datasheet:
Buy with Confidence
IMBG120R090M1HXTMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package | PG-TO263-7-12 |
| Base Product Number | IMBG120 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 136W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
| Vgs (Max) | +18V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |