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$11.00690
Standard Package: 1000
Quantity Unit Price
1 $11.00690
30 $10.56002

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Request for IMBG120R045M1HXTMA1

IMBG120R045M1HXTMA1

SICFET N-CH 1.2KV 47A TO263

Order Code:
CIS1455722
Manufacturer Part No:
IMBG120R045M1HXTMA1
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 1200 V 47A (Tc) 227W (Tc) Surface Mount PG-TO263-7-12
Technical Datasheet:
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IMBG120R045M1HXTMA1 Information

More Information
Mfr Infineon Technologies
Series CoolSiC™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package PG-TO263-7-12
Base Product Number IMBG120
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 227W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Rds On (Max) @ Id, Vgs 63mOhm @ 16A, 18V
Vgs(th) (Max) @ Id 5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 18 V
Vgs (Max) +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1527 pF @ 800 V
FET Feature Standard
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected