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Request for H5N3011P80-E#T2

H5N3011P80-E#T2

N-CHANNEL POWER MOSFET

Order Code:
CIS1343056
Manufacturer Part No:
H5N3011P80-E#T2
Package / Case:
TO-3P-3, SC-65-3
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H5N3011P80-E#T2 Information

More Information
Mfr Renesas Electronics America Inc
Series *
Package Bulk
Product Status Active
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PSG
Base Product Number 74FCT162244
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 125W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined