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Request for BSP322PL6327

BSP322PL6327

P-CHANNEL MOSFET

Order Code:
CIS1457383
Manufacturer Part No:
BSP322PL6327
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Technical Datasheet:
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BSP322PL6327 Information

More Information
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-21
Base Product Number BSP317
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Power Dissipation (Max) 1.8W (Ta)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected